ESD Solutions

High-speed

LVDS

subLVDS

High-speed ESD Solutions: LVDS

Summary
The LVDS I/O is a three-module design (input, output and reference block). Driver operates up to 1 GHz and receiver can operate up to 1.2 GHz (smaller technologies). The Driver is designed to drive either 50Ω or 100Ω differential termination. This cell has been designed to meet a set of the standard LVDS specifications (IEEE Std 1596.3-1996, Low Voltage Differential Signaling).

Diagram (input)
figure 18

Key Features

  • Powered from 1.8V ±10% and 1.0V (±10%) to 1.1V (-10%/+5%) core power supplies
  • Operates up to 1.2GHz (2.4Gbps) (technology dependant)
  • Input receive sensitivity of 75mV peak differential (without hysteresis)
  • Common mode range from 0V to 2.4V (limited by Power Supply)
  • Power-up sequence independent
  • Low power consumption
  • CML interface to core

Diagram (driver)
figure 19

Features

  • Powered from 1.8V ±10% and 1.0V to 1.1V (±10%) core power supplies
  • Operates up to 1 GHz (2Gbps) with external 1 pF load (technology dependant)
  • Common mode output range 1.22 Volts ±50mV
  • Power-up Sequence Independent
  • Low differential skew between TXO_P and TXO_N
  • Mode control for output drive control to drive either 100Ω (3.25 mA) or 50Ω (6.50 mA) termination
  • Low power consumption

Recommended Operating Conditions

Symbol Description Min Nom Max Units
VVDD Core supply voltage 0.9 1.0 to 1.1 1.115 V
VDVDD I/O supply voltage 1.62 1.8 1.98 V
VVREF Reference voltage   1.2   V
TA Ambient operating temperature 0 25 100 °C
TJ Junction temperature -40 25 125 °C
VPAD Voltage at PAD -0.3V   VDVDD+0.3V V

Foundry Support

Technology Silicon proven / in production Under development Planned
16nm   TSMC  
28nm GF, TSMC    
40nm GF, TSMC    
55nm GF, TSMC    
65nm GF, TSMC    
90nm GF, TSMC    
110nm      
130nm GF    

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High-speed ESD Solutions: subLVDS

Summary
The LVDS I/O is a three-module design (input, output and reference block). Maximum operating frequency ranges from 250 MHz for 130 nm to 1GHz for 28nm. Driver cell is designed to drive either 50Ω or 100Ω differential termination. Meets the standard SubLVDS specifications (SMIA 1.0 Part 2:CCP2).

Receiver
figure 20

Features

  • Powered from 1.8V ±10% and 1.0V(±10%) to 1.1V(-10%/+5%) core power supplies
  • Input receive sensitivity of 50mV peak differential (without hysteresis)
  • Common mode range from 0.4V to 1.4V (limited by Power Supply)
  • Power-up Sequence Independent
  • Duty Cycle Distortion (DCD) less than 50ps
  • Low power consumption

Driver
figure 1

Features

  • Powered from 1.8V ±10% and 1.0V to 1.1V (±10%) core power supplies
  • Common mode output range 0.90 Volts +/-50mV
  • Power-up Sequence Independent
  • Differential Skew between TXO_P and TXO_N 50ps
  • Mode control for output drive control to drive either 100Ω (1.5 mA typical) or 50Ω (3 mA typical) termination
  • Low power consumption

Recommended Operating Conditions

Symbol Description Min Nom Max Units
VVDD Core supply voltage 0.9 1.0 to 1.1 1.115 V
VDVDD I/O supply voltage 1.62 1.80 1.98 V
VVREF Reference voltage   0.9   V
TA Ambient operating temperature 0 25 100 °C
TJ Junction temperature -40 25 125 °C
VPAD Voltage at PAD -0.3V   VDVDD+0.3V V

Foundry Support

Technology Silicon proven / in production Under development Planned
12nm TSMC    
16nm TSMC    
28nm GF    
40nm GF, TSMC    
55nm GF    
65nm GF    
90nm      
110nm      
130nm      

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