ESD Solutions

Special



Special ESD Solutions: USB 1.1

Summary
This library includes USC_BI_100_33V_SC cell is a dual mode (full-speed and low-speed) host capable Universal Serial Bus (USB 1.1 analog transceiver) bidirectional I/O cell as well as two adapter cells designed to align USC_BI_100_33V_SC bus structure with core-limited and pad-limited libraries.

This cell is a macro cell that contains its own isolated power supplies (DVDD and DVSS), but shares VDD and VSS with the rest of the padring.

Diagram
figure 22

Simulation Results (low speed)
figure 23

Simulation Results (full speed)
figure 24

Foundry Support

Technology Silicon proven / in production Under development Planned
28nm GF    
40nm      
55nm GF    
65nm GF    
90nm GF, TSMC    
110nm      
130nm GF, TSMC    

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Special ESD Solutions: ONFI

Summary
This ONFI I/O library includes the combo driver / receiver cells, the ODT / driver impedance calibration cell, and a full complement of power and support cells for both single-ended and differential ONFI 3.0 signaling.

Features

  • Single-ended and differential ONFI signaling
  • On-die termination
  • Programmable drive strength
  • ODT / driver output impedance calibration
  • Operating frequency up to 200 MHz (400 MT/sec)
  • Staggered I/O implementation
  • Power-up sequencing independent design with Power-on Control
  • Robust ESD Protection
    • 2KV ESD Human Body Model (HBM)
    • 200 V ESD Machine Model (MM)
    • 500 V ESD Charge Device Model (CDM)

Diagram (driver)
figure 25

Diagram (clock driver)
figure 26

Recommended Operating Conditions

Parameter Description Min Nom Max Units
VVDD Core supply voltage 0.99 1.1 1.21 V
VDVDD I/O supply voltage 1.65 1.8 1.95 V
TJ Junction temperature -40 25 +125 °C
VPAD Voltage at PAD VDVSS   VDVDD V
VIH High-level input Voltage at IO 0.7 * VDVDD   VDVDD + 0.3 V
VIL Low-level input Voltage at IO VDVSS – 0.3   0.3 * VDVDD V

Foundry Support

Technology Silicon proven / in production Under development Planned
16nm   TSMC  
28nm TSMC GF  
40nm TSMC/GF    
55nm      
65nm TSMC    
90nm      
110nm      
130nm      

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Special ESD Solutions: Oscillators

Summary
Aragio Solutions offers several low jitter oscillator designs that can be used with a wide range of crystals.

32 KHz Oscillator
The OSx_BI_032_25V oscillator is designed to generate an asynchronous on-chip clock signal with an appropriate external oscillator crystal. The design has been optimized for low power, stability and minimum jitter using a general purpose 32KHz crystal. The design has been characterized to allow a variation of 4pF to 18pF on each pin.

Diagram
figure 27

Key features

  • Very low power (2.6 µW max)
  • Bypass mode
  • Power down (disable) mode
  • Speed-up circuitry for fast startup

100 MHz Oscillator
The OSx_BI_100_25V oscillator is designed to generate an asynchronous on-chip clock signal with an appropriate external oscillator crystal. The design has been optimize for a wide operating range, stability and minimum jitter using a wide range of industry standard crystals. The design has been characterized to allow a variation of 4pF to 18pF on each pin.

Diagram
figure 28

Key features

  • Programmable current for wide frequency range
  • Frequency range of 1 MHz to 100 MHz
  • DVDD options from 1.5V to 2.5V
  • Bypass mode
  • Power down (disable) mode

Recommended Operating Conditions

  Description Min Nom Max Units
VDVDD I/O supply voltage 1.35 1.5 3.63 V
TA Ambient operating temperature 0 25 100 °C
VVDD Core supply voltage 0.9 1.0 to 1.2 1.32 V
TJ Junction temperature -40 25 125 °C
VPAD Voltage at PAD 0 - VDVDD V
VIH Input logic high 0.7 * VDVDD   VDVDD + 0.3 V
VIL Input logic low VDVSS – 0.3   0.3 * VDVDD V

Foundry Support

Technology Silicon proven / in production Under development Planned
16nm   TSMC  
28nm GF, TSMC    
40nm GF, TSMC    
55nm GF    
65nm GF, TSMC    
90nm GF    
110nm GF    
130nm GF    
180nm GF    

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Special ESD Solutions: MII / RMII

Summary
This library includes MIx_BI_004_5T_NC pad, designed to conform to the Reduced Media Independent Interface™ (RMII™) specification intended for use between Ethernet PHYs and Switch ASICs. Under IEEE 802.3u an MII comprised of 16 pins for data and control is defined. In devices incorporating many MACs or PHY interfaces such as switches, the number of pins can add significant cost as the port count increases. Typical switch products in the industry today offer 12 to 24 ports in a single device. At 6 pins per port and 1 pin per switch ASIC, the proposed RMII specification would save 119 pins plus the extra power and ground pins to support those additional pins for a 12 port switch ASIC.

The purpose of this interface is to provide a low cost alternative to the IEEE 802.3u MII. Architecturally, the RMII specification provides for an additional reconciliation layer on either side of the MII but can be implemented in the absence of an MII.

Features

  • Capable of supporting 10 Mb/s and 100Mb/s data rates
  • A single clock reference is sourced from MAC to PHY (or from an external source)
  • It provides independent 2 bit wide (di-bit) transmit and receive data paths
  • It uses TTL signal levels, compatible with common digital CMO ASIC processes
  • Clock frequency of 50 MHz or less to minimize EMI and IC I/O requirements
  • Pin count independent of port density of the PHY
  • Single synchronous clocking
  • Reduction of required control pins

Diagram
figure 29

Output V-I Curve
figure 30

Recommended Operating Conditions

Symbol Description Min Nom Max Units
VDVDD I/O supply voltage 2.97 3.30 3.63 V
TA Ambient operating temperature 0 25 100 °C
VVDD Core supply voltage 0.9 1.0 to 1.2 1.32 V
TJ Junction temperature -40 25 125 °C
VPAD Voltage at PAD 0   VDVDD V
VIH Input logic high 2.0   - V
VIL Input logic low -   0.8 V
VOH Output high VDVDD – 0.4   - V
VOL Output low -   0.4 V

Foundry Support

Technology Silicon proven / in production Under development Planned
28nm      
40nm      
55nm GF    
65nm GF    
90nm      
110nm      
130nm GF    

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Special ESD Solutions: GMII

Summary
This library includes MIP_BI_001_33V_NC pad, designed to conform to the Gigabit Media Independent Interface™ (GMII™) specification intended for use between Ethernet PHYs and Switch ASICs. Under IEEE 802.3-2005 a GMII comprised of 8 pins for data and control is defined.

Diagram
figure 31

Simulation Results
figure 32

Recommended Operating Conditions

Symbol Description Min Nom Max Units
VDVDD I/O supply voltage 2.97 3.30 3.63 V
TA Ambient operating temperature 0 25 100 °C
VVDD Core supply voltage 0.9 1.0 to 1.2 1.32 V
TJ Junction temperature -40 25 125 °C
VPAD Voltage at PAD 0 - VDVDD V
VIH Input logic high 1.7 - - V
VIL Input logic low - - 0.9 V
VIL_AC Input high voltage AC 1.9 - - V
VIH_AC Input low voltage AC - - 0.7 V
VOH Output high 2.1 - 3.6 V
VOL Output low 0 - 0.5 V
F Frequency 125 – 100ppm   125 + 100ppm MHz

Foundry Support

Technology Silicon proven / in production Under development Planned
28nm      
40nm      
55nm GF    
65nm GF    
90nm      
110nm      
130nm GF    

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Special ESD Solutions: (r)GMII

Summary
This library includes MIP_BI_SDS_33V_NC pad, designed to conform to the Gigabit Media Independent Interface™ (GMII™) specification intended for use between Ethernet PHYs and Switch ASICs and Reduced Gigabit Media Independent Interface (RGMII) specified in HP RGMII ver 1.3, 12/10/2000. Under IEEE 802.3-2005 a GMII comprised of 8 pins for data and control is defined.

Diagram

figure33

Recommended Operating Conditions

  Description Min Nom Max Units
VDVDD I/O supply voltage (GMII mode) 2.97 3.3 3.63 V
VDVDD I/O supply voltage (RGMII mode) 2.25 2.5 2.75 V
TA Ambient operating temperature 0 25 100 °C
VVDD Core supply voltage 0.9 1.0-1.1 1.15 V
TJ Junction temperature -40 25 125 °C
VPAD Voltage at PAD 0 - VDVDD V
VIH Input logic high (RGMII) 1.7 - - V
VIL Input logic low (RGMII) - - 0.7 V
VIH Input logic high (GMII) 1.7 - - V
VIL Input logic low (GMII) - - 0.9 V
VIL_AC Input high voltage AC (GMII) 1.9 - - V
VIH_AC Input low voltage AC (GMII) - - 0.7 V
VOH Output logic high voltage (GMII) 2.1 - 3.6 V
VOL Output logic low voltage (GMII) 0 - 0.5 V
VOH Output logic high voltage (RGMII) 2.0 - VDVDD+0.3 V
VOL Output logic low voltage (RGMII) -0.3 - 0.4 V
F Frequency 2.5[*] – 100ppm   125 + 100ppm MHz

Foundry Support

Technology Silicon proven / in production Under development Planned
16nm   TSMC  
28nm GF, TSMC    
40nm GF, TSMC    
55nm      
65nm GF    
90nm      
110nm      
130nm      

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Special ESD Solutions: PCI 3.0

Summary
These pads are compatible with PCI Local Bus Specification Revision 3.0 for 3.3V signaling. Cell can be used for both 33MHz and 66MHz operation.

Includes:

Without Schmitt Trigger
figure 34

With Schmitt Trigger
figure 35

IOH/IOL (FF Corner)
figure 36

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Special ESD Solutions: IOH / IOL (SS corner)

figure 37

Recommended Operating Conditions

  Description Min Nom Max Units
VDVDD I/O supply voltage 2.97 3.3 3.63 V
TA Ambient operating temperature 0 25 100 °C
VVDD Core supply voltage 0.9 1.1-1.2 1.26 V
TJ Junction temperature -40 25 125 °C
VPAD Voltage at PAD 0 - VDVDD V
VIH Input logic high 0.7 * VDVDD   VDVDD + 0.3 V
VIL Input logic low VDVSS – 0.3   0.3 * VDVDD V

Foundry Support

Technology Silicon proven / in production Under development Planned
28nm GF    
40nm GF    
55nm GF    
65nm GF    
90nm      
110nm GF    
130nm GF    

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